LOW LOSS VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND FABRICATING METHOD THEREOF, ESPECIALLY INSERTING AN INSULATING LAYER INTO AN ETCHED REGION

摘要

PURPOSE: A low loss vertical-cavity surface-emitting laser device and a fabricating method thereof are provided to minimize current loss and optical loss by performing a selective etching process, inserting an insulating layer into an etched region, and reducing a tunneling and doping region. CONSTITUTION: A lower contact layer(23) includes a lower mirror layer(22) and an n type semiconductor. The lower mirror layer is formed by stacking an undoped semiconductor DBR(Distributed Bragg Reflector) on a semiconductor substrate(21). An active layer(24) as a quantum well layer is formed on the lower contact layer. An upper contact layer(25) as a semiconductor is formed on the active layer. An upper mirror layer(26) is formed by stacking an undoped semiconductor or a dielectric on the upper contact layer. The upper contact layer and the active layer are partially etched and an insulating dielectric(27) is inserted therein. An upper electrode(29) is connected to the upper contact layer. A lower electrode(30) is connected to the lower contact layer.