METHOD AND APPARATUS FOR SUPPLYING PROCESS GAS TO CHEMICAL VAPOR DEPOSITION SYSTEM PREVENTING PARTICLES BY INJECTING TEOS GAS OBLIQUELY

摘要

PURPOSE: A method for supplying process gas to a chemical vapor deposition system is provided to prevent particles from forming on a wafer by injecting TEOS gas obliquely to an oxygen supply line. CONSTITUTION: A liquid TEOS(Tetraethyl orthosilicate) is obliquely injected to an oxygen supply line(10) for supplying oxygen to a process chamber. The vaporized TEOS gas is supplied to the process chamber with the oxygen. The TEOS gas is injected by an angle(α) of 30-45 degree relative to the perpendicular direction(P) of the oxygen supply line.