| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve refresh in a cell region and to prevent degradation of a PMOS transistor in a peripheral region by selectively and easily removing a liner nitride of the peripheral region. CONSTITUTION: A trench is formed in a substrate(20) by using a hard mask(200). A wall oxide layer(23) is formed on the trench. A liner nitride layer is formed on the wall oxide layer and the hard mask. A fluidity layer is deposited on the liner nitride layer. By reflowing the fluidity layer, the fluidity layer is filled in the trench of a cell region. By blanket etching of the fluidity layer, the liner nitride layer is exposed. The fluidity layer of a peripheral region is removed. The liner nitride layer of the peripheral region is removed by using the fluidity layer of the cell region as an etch barrier.
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