发明名称 SEMICONDUCTOR MEMORY DEVICE IMPROVING YIELD USING FUSE SET IN REPAIRING
摘要 PURPOSE: A semiconductor memory device is provided to improve yield by improving utilization of a fuse set for substitution the path of low address or column address. CONSTITUTION: A semiconductor memory device includes a plurality of normal cells, a plurality of preliminary cells, and a plurality of normal fuse sets. The normal fuse sets further include a plurality of address fuses(A0-A13), an enable fuse(Col-En) for column address fuse sets, and an enable fuse(Row-En) for low address fuse sets. The low address enable fuse enables the normal fuse set selected by blowing to substitute low address. The column address enable fuse enables the normal fuse set selected by blowing to substitute column address.
申请公布号 KR20050002078(A) 申请公布日期 2005.01.07
申请号 KR20030043125 申请日期 2003.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHANG, HEON YONG;PARK, SUK KWANG
分类号 H01L21/82;(IPC1-7):H01L21/82 主分类号 H01L21/82
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