METHOD OF FORMING STORAGE NODE ELECTRODE OF SEMICONDUCTOR DEVICE USING PROTECTION LAYER CAPABLE OF FIXING ADJACENT FOUR STORAGE NODE ELECTRODES TO EACH OTHER

摘要

PURPOSE: A method of forming a storage node electrode of a semiconductor device is provided to prevent the leaning between adjacent storage node electrodes in spite of high aspect ratio of a capacitor by using a protection layer capable of fixing adjacent four storage node electrodes to each other. CONSTITUTION: A lower insulating layer with a storage node contact plug is formed on a semiconductor substrate. An oxide layer with a storage node electrode region for exposing the contact plug to the outside is formed thereon. A storage node electrode(51) for contacting the contact plug is formed in the storage node electrode region and an SOG(Spin On Glass) insulating layer is completely filled in the storage node electrode region. An island type protection pattern(55) for connecting adjacent four storage node electrodes with each other is formed thereon.