METHOD FOR FORMING METALLIC LAYER USING SELECTIVELY RESIST FLOW OPERATION SELECTIVELY ACCORDING TO REGIONS WHERE THE METALLIC LAYER IS FORMED

摘要

PURPOSE: A method for forming a metallic layer is provided to selectively adopt a resist flow operation according to regions where the metallic layer is formed. CONSTITUTION: An oxide layer for trench(500) is formed on a substrate(400). A first photoresist pattern is formed on the oxide layer. A second photoresist pattern(221P) is formed using a resist flow operation on the first photoresist pattern. A first trench is formed by etching the oxide layer for trench using the second photoresist pattern as a mask. A third photoresist pattern is formed by removing the second photoresist pattern and using a metallic interconnection mask for metallic interconnection region/peripheral circuit. A second trench is formed by etching the oxide layer for trench using the third photoresist pattern as a mask. Metallic interconnections are formed by removing the third photoresist pattern and filling the first and second trenches with a conductive material.