| 摘要 |
PURPOSE: A method for forming an insulation thin film of a semiconductor device is provided to improve an electrical characteristic and throughput of a multilayered insulation thin film composed of an Al2O3 thin film and a HfO2 thin film by sufficiently decreasing a deposition temperature of an Al2O3 thin film and by forming the multilayered insulation thin film in a single chamber. CONSTITUTION: An alumina thin film is formed on a wafer by using O3 gas, an Al source and NH3 gas as oxidation source gas. A hafnium oxide thin film is formed on the alumina thin film by using O3 gas and a Hf source as oxidation source gas. The alumina thin film and the hafnium oxide thin film are formed in a single chamber.
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