Integrated circuit, has temperature detection device with field effect transistors present in blocked state, and inverter sensing value of voltage present at common terminal between blocked transistors and resistive unit

摘要

The circuit has a temperature detection device (DTM) to detect the temperature of an integrated circuit. The device has field effect transistors (T1-T3) that are connected in parallel and in their blocked state. A resistive unit (T4) is connected in series with the transistors. An inverter (IV) senses the value of voltage present at the common terminal between the blocked transistors and the resistive unit. An independent claim is also included for a method for detecting the temperature of an integrated circuit.