发明名称 |
Treatment of silicon based semiconductors using a halogen solution to form a layer of silicon oxide to produce defect free surfaces in integrated circuits |
摘要 |
<p>Treatment of a silicon based semiconductor material by a humid route comprises the formation of a layer of silicon oxide by putting the silicon surface in contact with a halogen solution, in an appropriate solvent. An independent claim is also included for an integrated circuit incorporating a layer of silicon oxide obtained.</p> |
申请公布号 |
FR2857154(A1) |
申请公布日期 |
2005.01.07 |
申请号 |
FR20030008055 |
申请日期 |
2003.07.02 |
申请人 |
STMICROELECTRONICS SA |
发明人 |
CHEMLA MARIUS;PETITDIDIER SEBASTIEN;LEVY DIDIER;ROUELLE FRANCOIS |
分类号 |
H01L21/306;H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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