METHOD OF FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE USING UNIFORM SIDEWALL OXIDE LAYER FOR PREVENTING MOAT

摘要

PURPOSE: A method of forming an isolation layer of a semiconductor device is provided to prevent moat from being generated at an upper corner of the isolation layer by using an uniform sidewall oxide layer. CONSTITUTION: A tilt ion-implantation is performed on a silicon substrate(21) by using a pad nitride pattern(23) and a pad oxide pattern(22) as an ion-implantation mask. A trench(24) is formed by performing etching thereon. A sidewall oxide layer(25) is uniformly formed from a bottom of the trench to sidewalls of the pad oxide pattern. A gap-fill oxide layer is filled in the trench.