METHOD FOR FABRICATING STORAGE NODE OF CAPACITOR TO REDUCE UPPER BRIDGE OF STORAGE NODE

摘要

PURPOSE: A method for fabricating a storage node of a capacitor is provided to reduce an upper bridge of a storage node by depositing an oxide layer having poor step coverage on a storage node oxide layer. CONSTITUTION: An etch stop layer(3) is formed on a semiconductor substrate. An oxide layer(4) for forming a storage node is formed on the etch stop layer. A polysilicon hard mask and an ARC(anti-reflective coating) are sequentially formed on the oxide layer. Photoresist is formed on the ARC and patterned to be a predetermined storage node pattern. The exposed part of the ARC is selectively etched by using the photoresist pattern, and an exposed polysilicon hard mask is selectively etched. The exposed part of the oxide layer for forming the storage node is selectively dry-etched and a cleaning process is performed. The polysilicon hard mask is eliminated by an etch-back process. The oxide layer for forming the storage node is wet-etched to increase CD(critical dimension). A buffer oxide layer(9) with poor step coverage is deposited on the substrate. The buffer oxide layer deposited under a storage node region and the etch stop layer under the buffer oxide layer are eliminated by a dry etch process.