| 摘要 |
PROBLEM TO BE SOLVED: To provide a SONOS memory device, in which retention property is maintained normally, and a memory node layer is maintained in amorphous state during a MOS process performed at elevated temperature, and to provide its manufacturing method. SOLUTION: The SONOS memory device has a semiconductor substrate, and a multifunctional device which is formed in the semiconductor substrate and has both of a switching function and a data storage function. The multifunctional device contains a first impurity area and a second impurity area which are separated centering at a channel, and a data storage type lamination which is formed on the semiconductor substrate between those areas, and is formed by laminating a tunneling oxide film, the memory node layer in which data are saved, a shielding film and an electrode layer successively. COPYRIGHT: (C)2005,JPO&NCIPI
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