| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which is excellent in heat radiation properties while suppressing a decrease of a mechanical strength of a substrate, and to provide a semiconductor device. SOLUTION: The semiconductor element 1 includes a GaAs substrate 110, a field effect transistor 120, and a groove 140. The GaAs substrate 110 has first to third regions 131 to 133 sequentially arranged along a predetermined axial direction. The field effect transistor 120 has a source electrode 112, a drain electrode 114, a gate electrode 116 and an operation layer 118. The source electrode 112 is provided on the surface of the first region 131. The gate electrode 116 is provided on the surface of the second region 132. The drain electrode 114 is provided on the surface of the third region. The operation layer 118 is provided under the gate electrode 116. The groove 140 is formed on a rear surface of the second region 132 of the GaAs substrate 110. COPYRIGHT: (C)2005,JPO&NCIPI
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