| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which the yield of a product is improved by preventing a backflow from an atmosphere-side exhaust pipe so as to prevent the deterioration of the semiconductor device when exhausting atmosphere containing gas used for manufacturing the semiconductor from a reaction chamber. SOLUTION: A check valve is arranged to the atmosphere-side exhaust pipe for exhausting an atmosphere within a chamber to an atmosphere side, the check valve is bypassed, and a bypass pipe arranged with a bypass valve is provided at the atmosphere-side exhaust pipe. In an exhaustion process, when chamber-side pressure on the side of the chamber of the check valve in the atmosphere-side exhaust pipe is higher than atmosphere-side pressure on the atmosphere side, the bypass valve is opened. COPYRIGHT: (C)2005,JPO&NCIPI |
