SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To execute a high-speed operation by suppressing the influence of the resistance of a switch transistor and to reduce current consumption by reducing the charged/discharged current of a bit line capacity in the amplification operation of the memory of a semiconductor device. SOLUTION: A pair of bit lines BL1 and XBL1 are connected to a sense amplifier SAMP through an N channel type transistor pair (switch SW1). A P channel type amplifier PchAMP1 and memory cells constituting a memory cell array MCA1 are connected to the pair of bit lines BL1 and XBL1. The P channel type Amplifier PchAMP1 is operated after the operation of the sense amplifier SAMP. COPYRIGHT: (C)2005,JPO&NCIPI