发明名称 |
INTEGRATED MUTLI-STEP GAP FILL AND ALL FEATURE PLANARIZATION FOR CONDUCTIVE MATERIALS |
摘要 |
A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another. |
申请公布号 |
WO0250336(A3) |
申请公布日期 |
2005.01.06 |
申请号 |
WO2001US46449 |
申请日期 |
2001.12.03 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
HSU, WEI-YUNG;CHEN, LIANG-YUH;MORAD, RATSON;CARL, DANIEL, A.;SOMEKH, SASSON |
分类号 |
B24B37/00;B24B37/04;C25D5/00;C25D5/22;C25D7/12;H01L21/288;H01L21/304;H01L21/321;H01L21/768 |
主分类号 |
B24B37/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|