发明名称 |
REPROCESSING METHOD OF ISOLATION LAYER USING SC1 SOLUTION FOR REMOVING EFFICIENTLY PARTICLES FROM LINER OXIDE LAYER AND SUPPRESSING VOIDS |
摘要 |
PURPOSE: A reprocessing method of an isolation layer is provided to remove efficiently particles from a liner oxide layer and to suppress simultaneously voids by using an SC1 solution instead of DI(DeIonized) water. CONSTITUTION: A pad oxide layer and a nitride layer are sequentially deposited on a substrate and patterned. A trench is formed by etching selectively the substrate. A liner oxide layer is formed on an inner wall of the trench by using a heat treatment. A cleaning process for removing particles from the liner oxide layer is performed on the resultant structure using an SC1 solution. A gap-filling process is performed for the trench.
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申请公布号 |
KR20050000569(A) |
申请公布日期 |
2005.01.06 |
申请号 |
KR20030041014 |
申请日期 |
2003.06.24 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
KIM, SUNG REA |
分类号 |
H01L21/762;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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