发明名称 REPROCESSING METHOD OF ISOLATION LAYER USING SC1 SOLUTION FOR REMOVING EFFICIENTLY PARTICLES FROM LINER OXIDE LAYER AND SUPPRESSING VOIDS
摘要 PURPOSE: A reprocessing method of an isolation layer is provided to remove efficiently particles from a liner oxide layer and to suppress simultaneously voids by using an SC1 solution instead of DI(DeIonized) water. CONSTITUTION: A pad oxide layer and a nitride layer are sequentially deposited on a substrate and patterned. A trench is formed by etching selectively the substrate. A liner oxide layer is formed on an inner wall of the trench by using a heat treatment. A cleaning process for removing particles from the liner oxide layer is performed on the resultant structure using an SC1 solution. A gap-filling process is performed for the trench.
申请公布号 KR20050000569(A) 申请公布日期 2005.01.06
申请号 KR20030041014 申请日期 2003.06.24
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 KIM, SUNG REA
分类号 H01L21/762;(IPC1-7):H01L21/762 主分类号 H01L21/762
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