| 摘要 |
PURPOSE: A method of manufacturing a GaN LED(Light Emitting Diode) device is provided to improve remarkably emissive efficiency of an LED, to perform easily eutectic bonding and to reduce the consumption of a diamond tip in a scribing process by forming a groove with tilted surfaces on a backside of a sapphire substrate. CONSTITUTION: An LED wafer is formed by forming a light emissive structure(23) and electrodes(25,26,27) on a sapphire substrate(21). Lapping is performed on a backside of the LED wafer. A plurality of grooves(32) with tilted surfaces are regularly formed on the backside of the LED wafer by using a laser processing technique. A backside metal made of a reflective coating, a barrier layer(29) and a bonding layer(30) is formed on the backside of the LED wafer. The grooves are used as scribing lines. |
