METHOD OF MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE USING THICKENED DIELECTRIC FILM FOR PREVENTING SHORT BETWEEN UPPER AND LOWER ELECTRODES

摘要

PURPOSE: A method of manufacturing a capacitor of a semiconductor device is provided to prevent electrical short between an upper electrode and a lower electrode by forming thickly a dielectric film enough using an HDPCVD(High Density Plasma Chemical Vapor Deposition). CONSTITUTION: A first metal line pattern(30) is formed on a silicon substrate(10) via a lower insulating layer(20). An upper insulating layer(40) is formed thereon. A via hole(41) for exposing the first metal line pattern to the outside is formed in the upper insulating layer. A dielectric film(50) with a thickness range of 270 to 330 angstrom is formed along the upper surface of the resultant structure by using an HDPCVD. An upper electrode is formed on the dielectric film.