ONE TRANSISTOR FLASH MEMORY CELL

摘要

An integrated circuit has a high voltage area, a logie area and a memory array for forming a system on a chip that includes linear, logic and memory devices. The memory has floating gate transistors disposed in a triple well structure with a raised drain bit line 13 substantially vertically aligned with a buried source bit line 14. The memory array separates the columns with deep trenches 46 that may also be formed into charge pump capacitors.