METHOD FOR FORMING METAL INTERCONNECTION TO AVOID METAL LAYER CMP PROCESS

摘要

PURPOSE: A method for forming a metal interconnection is provided to avoid a metal layer CMP(chemical mechanical polishing) process by selectively depositing a metal layer only in a contact hole through an electroplating process. CONSTITUTION: A conductive pattern(11) of a predetermined type is formed on a wafer(10). An insulation layer(12) is formed on the wafer including the conductive pattern. The insulation layer is selectively etched to form a contact hole(13) exposing a part of the conductive pattern. An electroplating process is performed on the wafer including the contact hole to form a metal interconnection(14) for selectively filling the contact hole.