METHOD FOR FABRICATING SEMICONDUCTOR TRANSISTOR TO REDUCE DRAIN LEAKAGE CURRENT AT HIGH DRAIN VOLTAGE AND MILLER CAPACITANCE

摘要

PURPOSE: A method for fabricating a semiconductor transistor is provided to reduce a drain leakage current at a high drain voltage and miller capacitance by forming a thick gate oxide layer at a drain. CONSTITUTION: A gate oxide layer is formed on an active region of a semiconductor substrate(21) having a filed oxide layer(23) for defining an isolation region. A part of the gate oxide layer is removed to form the first and second gate oxide layers(25a,25b) with different thicknesses. A gate electrode is formed on the first and second gate oxide layers. A spacer(31) is formed on the side surface of the gate electrode. A source(33) and a drain(35) are formed in the active region of the semiconductor substrate under the side surface of the spacer.