| 摘要 |
PURPOSE: A MOSFET(metal oxide semiconductor field effect transistor) structure with an increased effective channel length of a semiconductor device is provided to prevent off-current from increasing or decreasing in a burn-in stress process of a MOSFET by varying the interfacial part of an isolation layer located under a gate insulation layer right under a gate electrode and by increasing an effective channel length as well as a whole channel length. CONSTITUTION: A MOSFET includes a gate electrode(106), a source junction(108) and a drain junction(110). The source junction and the drain junction of the MOSFET are different in size. The isolation layers(102) of the source/drain junction overlapped with the lower part of the gate electrode of the MOSFET are different from each other. The source and drain junctions are interconnected as a Z or reverse Z shape(112).
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