发明名称 |
Methods of forming an oxide layer in a transistor having a recessed gate |
摘要 |
A method of forming an oxide layer on a semiconductor substrate includes thermally oxidizing a surface of the substrate to form an oxide layer on the substrate, and then exposing the oxide layer to an ambient including predominantly oxygen radicals to thereby thicken the oxide layer. Related methods of fabricating a recessed gate transistor are also discussed.
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申请公布号 |
US2005003679(A1) |
申请公布日期 |
2005.01.06 |
申请号 |
US20040850690 |
申请日期 |
2004.05.21 |
申请人 |
HYUN SANG-JIN;SHIN YU-GYUN;KOO BON-YOUNG;HONG SUG-HUN;JEON TAEK-SOO;RYU JEONG-DO |
发明人 |
HYUN SANG-JIN;SHIN YU-GYUN;KOO BON-YOUNG;HONG SUG-HUN;JEON TAEK-SOO;RYU JEONG-DO |
分类号 |
H01L21/336;H01L21/316;H01L21/762;(IPC1-7):H01L21/76;H01L21/31;H01L21/469 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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