发明名称 METHOD FOR MANUFACTURING HETEROGENEOUS STRUCTURE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method to manufacture a structure of two bonded substrates with different coefficients of thermal expansion. <P>SOLUTION: The method of this invention includes a process of selecting a primary substrate 20 composed of a primary material, a secondary material composed of a secondary material with a different coefficient of expansion from the primary material, and a tertiary substrate 26 composed of a material with a coefficient of thermal expansion which is the same or approximately the same as one or the other of the primary material and the secondary material; a process to form an assembly so that the primary substrate 20 and the secondary substrate 22 can be pasted together, or one of the primary substrate 20 and the secondary substrate 22 and the tertiary substrate can be pasted together; and a process to cause a crack within the thickness of the primary substrate 20. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005005708(A) 申请公布日期 2005.01.06
申请号 JP20040170674 申请日期 2004.06.09
申请人 SOI TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 MARTINEZ MURIEL;BOUSSAGOL ALICE
分类号 H01L21/265;H01L21/02;H01L21/762;H01L27/12;(IPC1-7):H01L21/02 主分类号 H01L21/265
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