CARBON BLACK FOR SEMICONDUCTOR ENCAPSULATION MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a carbon black for a semiconductor encapsulation material capable of preventing current leakage failure even in a semiconductor device having extremely small distance of gold wires. SOLUTION: The carbon black for a semiconductor encapsulation material contains 0-1 ppm plus mesh fraction having particle size of≥25μm. A carbon black processed to highly exclude the particles of≥25μm diameter to attain the plus mesh content of 0-1 ppm for particles of≥25μm diameter causes extremely low probability of forming a conducting channel between gold wires of a semiconductor device having a gold wire distance of≤50μm caused by the coagulation of a plurality of non-insulating coarse particles in the carbon black even if the non-insulating coarse particles are positioned near the gold wires. Accordingly the current leakage failure between the gold wires can be prevented by the use of the carbon black. COPYRIGHT: (C)2005,JPO&NCIPI