Low dielectric constant insulating film and method of forming the same

摘要

The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si-CH3 bond in the skeleton of Si-O-Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3 groups from Si-CH3 bond in the insulating film; and (c) ejecting the broken CH3 groups from the insulating film.