发明名称 GATE ELECTRODE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a gate electrode and its manufacturing method capable of improving the moldability of the electrode and of sufficiently enhancing the productivity. SOLUTION: A mold corresponding to an electrode pattern brought into a state with a pair of electrodes geared with each other is formed on a prepared metal substrate with a resist (S107); a mold-releasing film is formed on the surface of the mold (S109); a conductive metal is made to grow in the mold by electric casting to form the electrode pattern (S111); and thereafter the resist is removed (S113). The metal substrate with the electrode pattern formed is heated (S115); a frame member is stuck to the metal substrate so that a part on the backbone part side of a branch part of the electrode pattern, a tip part of the branch part and the backbone part come into contact with an adhesion layer formed on the frame member (S117); and the electrode pattern is left on the frame member by detaching the metal substrate after the adhesion layer is hardened (S119). COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005005124(A) 申请公布日期 2005.01.06
申请号 JP20030166955 申请日期 2003.06.11
申请人 HAMAMATSU PHOTONICS KK 发明人 MATSUURA YOSHIKI
分类号 H01J9/14;H01J49/06;H01J49/40;(IPC1-7):H01J49/06 主分类号 H01J9/14
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