METHOD OF PRODUCING A STACKED STRUCTURE BY MEANS OF THIN LAYER TRANSFER

摘要

The invention relates to a method of producing a stacked structure by means of thin layer transfer. The inventive method comprises the following steps consisting in: using an initial substrate comprising a semiconductor material in order to form a part that is to be transferred, said part including at least one thin layer of the semiconductor material and a first bonding surface; obtaining a receiving support comprising a second bonding surface; transferring the aforementioned part from the initial substrate to the receiving support, said first bonding surface being fixed to the second bonding surface by means of molecular adhesion along a bonding interface; and forming an adapted zone which can be used to alter the electrical properties of all or part of the thin layer, said adapted zone being disposed in the structure at the bonding interface.