| 发明名称 |
Method for manufacturing heterostructure bipolar InP-transistors based on III-V semiconductors |
| 摘要 |
<p>Production of indium phosphide (InP)-based heterostructure bipolar transistors based on III/V semiconductors comprises ion implanting regions of the semiconductor material to be etched away and wet chemical etching.</p> |
| 申请公布号 |
EP1494274(A2) |
申请公布日期 |
2005.01.05 |
| 申请号 |
EP20040090232 |
申请日期 |
2004.06.14 |
| 申请人 |
FORSCHUNGSVERBUND BERLIN E.V. |
发明人 |
KIM, SEON-OHK;WUERFL, JOACHIM;WITTRICH, HARALD |
| 分类号 |
H01L21/331;H01L21/285;H01L21/306;H01L21/3213;H01L29/04;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
| 代理机构 |
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