| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to enhance capacitance by using a storage node electrode of double structure and to prevent collapse of the capacitor by forming a conductive pattern between the storage node electrode and a conductive plug. CONSTITUTION: A first cap oxide layer(106) with a first storage node contact(107) is formed on a substrate(100). A first polysilicon layer(108) is formed on the resultant structure. A second storage node contact is formed by selectively etching a second cap oxide layer to expose the first polysilicon layer. The second cap oxide layer is exposed by CMP(Chemical Mechanical Polishing) of a silicon nitride layer and a second polysilicon layer and wet-etched. A third polysilicon layer is formed on the resultant structure. Storage node electrode patterns are isolated by etch-back of the third and first polysilicon layers. By wet-etching the remaining silicon nitride layer, a storage node electrode(S2) of double structure including the second and third polysilicon layers is formed.
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