| 摘要 |
The present invention relates to a process for the preparation of nitrides of the formula Ga<SUB>1-x</SUB>In<SUB>x</SUB>N, where 0.01<=x<=1, in which one or more compounds of the general formula, M(NR<SUB>2</SUB>)<SUB>3</SUB>, where all R, independently of one another, are H, linear or branched -C<SUB>1-8</SUB>-alkyl or -SiR<SUP>x</SUP><SUB>2</SUB>, where R<SUP>x </SUP>is linear or branched -C<SUB>1-8</SUB>-alkyl, and M is Ga, In or Ga<SUB>1-x</SUB>In<SUB>x</SUB>, are reacted with ammonia, where the one or more compounds M(NR<SUB>2</SUB>)<SUB>3 </SUB>are selected in such a way that the ratio 1-x Ga to x In also applies in these compounds.
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