发明名称 |
MASK ARRANGED AT END POINTS OF CELL REGION FOR FORMING BUTTING VERNIER |
摘要 |
PURPOSE: A mask for forming a butting vernier is provided to feedback a subtle distortion of exposure equipment by designing the mask to be arranged at end points of a cell region rather than up/down/left/right directions. CONSTITUTION: A mask is used to form a butting vernier which is used to detect an accuracy of a stage(40) at an initial exposure. The mask includes a first mask pattern for forming an outer vernier and a second mask pattern(42) for forming an inner vernier. The first mask pattern and the second mask pattern are sequentially formed at each of regions corresponding to exteriors of edges of a cell and are spaced from each other in a diagonal direction.
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申请公布号 |
KR20040110282(A) |
申请公布日期 |
2004.12.31 |
申请号 |
KR20030039508 |
申请日期 |
2003.06.18 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, IL HYEONG;KWON, GI SEONG |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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