发明名称 MASK ARRANGED AT END POINTS OF CELL REGION FOR FORMING BUTTING VERNIER
摘要 PURPOSE: A mask for forming a butting vernier is provided to feedback a subtle distortion of exposure equipment by designing the mask to be arranged at end points of a cell region rather than up/down/left/right directions. CONSTITUTION: A mask is used to form a butting vernier which is used to detect an accuracy of a stage(40) at an initial exposure. The mask includes a first mask pattern for forming an outer vernier and a second mask pattern(42) for forming an inner vernier. The first mask pattern and the second mask pattern are sequentially formed at each of regions corresponding to exteriors of edges of a cell and are spaced from each other in a diagonal direction.
申请公布号 KR20040110282(A) 申请公布日期 2004.12.31
申请号 KR20030039508 申请日期 2003.06.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, IL HYEONG;KWON, GI SEONG
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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