| 摘要 |
PURPOSE: A method for forming a lower electrode of a capacitor in a semiconductor memory and a resultant structure of the same are provided to reduce a number of steps of a manufacturing process, to increase a capacitance, to prevent a leaning phenomenon that lower electrodes are broken, and to reduce a manufacturing cost. CONSTITUTION: A structure of a lower electrode of a capacitor includes an interlayer dielectric(113a,116a,115a), a contact pad, and a butting contact structure. The interlayer dielectric covers a cell transistor. A lower portion of a lower electrode(123,123a,123b,123c,123d,123e) is recessed at an edge portion of an upper portion of the interlayer dielectric. The contact pad couples active regions of the cell transistor. The butting contact structure is coupled with a sidewall of the contact pad. The contact pad and the butting contact structure are formed in formation of apertures of the capacitor.
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