发明名称 MASK FOR GRADUAL STITCHING EXPOSURE PROCESS CAPABLE OF MINIMIZING DEFECTS RESULTING FROM GENERATION OF UNEXPOSED ZONES
摘要 PURPOSE: Provided is a mask for use in a gradual stitching exposure process, which minimizes defects resulting from generation of unexposed zones to improve the reliability of a member to be exposed, such as a substrate for LCD devices, and to increase production efficiency. CONSTITUTION: The mask(1a) for use in a gradual stitching exposure process comprises an exposure section(20a) provided with a masking pattern(22a) for forming a pattern on a shot(1s) exposed on a member to be exposed, and a light-shielding section(10a) provided with a light-shielding block(12a,14a) for preventing another shot adjacent to the above exposed shot from being subjected to exposure, wherein the light-shielding section(10a) is provided so that the light-shielding blocks(14a) adjacent and facing to each other can be formed integrally.
申请公布号 KR20040110381(A) 申请公布日期 2004.12.31
申请号 KR20030039696 申请日期 2003.06.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAEK, SEUNG SU
分类号 G03F1/54;G03F1/00;G03F1/38;(IPC1-7):G03F1/08 主分类号 G03F1/54
代理机构 代理人
主权项
地址