| 摘要 |
PURPOSE: A high speed thermal treatment apparatus and a method of the same are provided to prevent the occurance of a contact resistance by determining a residual oxygen amount in a process chamber. CONSTITUTION: A high speed thermal treatment apparatus includes a process chamber(2), a loadlock chamber(4), a residual oxygen detector, and a controller. The process chamber includes a susceptor for heating a wafer. The loadlock chamber is implemented on one side of the process chamber and includes a robot therein. The residual oxygen detector is implemented on an inner portion of the loadlock chamber or the process chamber to detect an amount of residual oxygen. The controller compares the detected amount from the residual oxygen detector with a predetermined reference amount, and loads the wafer to the process chamber to perform a heat treatment thereon, when the detected amount is lower than the reference amount while removes the oxygen from the loadlock chamber without transferring the wafer to the process chamber, when the detected amount is greater than the reference amount.
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