ELECTROSTATIC CHARGE DISCHARGE CIRCUIT OF SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF HAVING HIGH CURRENT BYPASS ELEMENT

摘要

PURPOSE: An electrostatic charge discharge circuit of a semiconductor element and a structure thereof are provided to bypass a lot of tunneling current via a zenor diode when a voltage higher than an operational voltage of an inner circuit is applied. CONSTITUTION: An electrostatic charge discharge circuit includes a ground pad, a source pad, a plurality of electrical signal pads(D), and an internal circuit having a plurality of input nodes. The electrostatic charge discharge circuit further includes a plurality of MOS transistors(TP) and one common diode(ZD). Gate electrodes and drain regions of the MOS transistors are coupled with the electrical signal pads. The common diode is coupled with the source region of each of the MOS transistors.