发明名称 |
Method for forming storage node contact plug of semiconductor device |
摘要 |
The present invention relates to a method for forming a storage node contact plug of a semiconductor device. The method includes the steps of: forming a bit line structure including a bit line and a hard mask on a substrate; forming a spacer made of an oxide material at sidewalls of the bit line structure; forming a line type photoresist pattern arranged in a direction vertical to the bit line structure on a storage node contact area of the substrate; forming an inter-layer insulation layer on an entire surface of the resulting structure including the line type photoresist pattern such that the inter-layer insulation layer is filled into a space between the photoresist pattern; etching an upper portion of the inter-layer insulation layer to expose the photoresist pattern; and removing the exposed photoresist pattern to open the storage node contact area. |
申请公布号 |
US2004264132(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20030746108 |
申请日期 |
2003.12.23 |
申请人 |
KIM YU-CHANG;CHO YUN-SEOK |
发明人 |
KIM YU-CHANG;CHO YUN-SEOK |
分类号 |
H01L21/28;H01L21/60;H01L21/8239;H05K7/20;(IPC1-7):H05K7/20 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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