发明名称 |
Pattern transfer of an extreme ultraviolet imaging layer via flood exposure of contact mask layer (EUV CML) |
摘要 |
A method of forming a device feature using an extreme ultraviolet (EUV) imaging layer (or a sub-deep ultraviolet imaging layer) and one or more other masks layers. The method includes forming a device feature layer; forming a photoresist layer over the device feature layer; forming a contact mask layer (CML) over the photoresist layer; forming an extreme ultraviolet (EUV) imaging layer over the CML; forming a first opening through the EUV imaging layer to expose a first underlying region of the CML; forming a second opening through the CML to expose a second underlying region of the photoresist layer, wherein the second opening is situated directly below the first opening; forming a third opening through the photoresist layer to expose a third underlying region of the device feature layer, wherein the third opening is situated directly below the second opening; forming a fourth opening through the device feature material layer, wherein the fourth opening is situated directly below the third opening.
|
申请公布号 |
US2004265748(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20030609926 |
申请日期 |
2003.06.30 |
申请人 |
BRISTOL ROBERT;CAO HEIDI;MEAGLEY ROBERT;RICE BRYAN;WARD CURTIS |
发明人 |
BRISTOL ROBERT;CAO HEIDI;MEAGLEY ROBERT;RICE BRYAN;WARD CURTIS |
分类号 |
G03F7/00;H01L21/311;H01L21/3213;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|