| 摘要 |
Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer. In addition to a tunnel junction on the p-side of the active zone, the tunnel junction borders a second n-doped semi-conductor layer with the exception of an area forming an aperture. An n-doped layer is provided between the layer provided for the tunnel junction and the at least one p-doped semiconductor layer. The tunnel junction may be arranged in a maximum or minimum of the vertical intensity distribution of the electric field strength. This enables surface-emitting laser diodes to be produced in high yields with stabilization of the lateral single-mode operation, high performance and wave guiding properties. |
