| 发明名称 |
A method of forming a nickel silicide layer |
| 摘要 |
<p>A semiconductor device is formed by implanting a dopant (65) into a substrate (51) to form a source/drain region; forming a silicide blocking layer; annealing the substrate to activate a portion of the dopant at an anneal temperature; exposing silicon surfaces on the substrate; and forming silicide layers on the exposed silicon surfaces. The silicide layers are formed at a silicidation temperature which is less than the anneal temperature.</p> |
| 申请公布号 |
EP1492162(A2) |
申请公布日期 |
2004.12.29 |
| 申请号 |
EP20030027922 |
申请日期 |
2003.12.04 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KU, JA-HUM;SUN, MIN-CHUL;ROH, KWAN-JONG;KIM, MIN-JOO |
| 分类号 |
H01L21/28;H01L21/20;H01L21/24;H01L21/285;H01L21/3205;H01L21/336;H01L23/52;H01L29/40;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
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