| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<p>Impurities are introduced into a gate electrode (103) formed on a semiconductor substrate (101) with a gate insulating film (102) interposed between them. A laser beam is applied to the gate electrode (103) to diffuse the introduced impurities to the interface between the gate electrode (103) and the gate insulating film (102). As a result depletion of the gate electrode (103) is suppressed.</p> |
| 申请公布号 |
WO2004114413(A1) |
申请公布日期 |
2004.12.29 |
| 申请号 |
WO2003JP07848 |
申请日期 |
2003.06.20 |
| 申请人 |
YAMAMOTO, TOMONARI;FUJITSU LIMITED;OKABE, KENICHI |
发明人 |
YAMAMOTO, TOMONARI;OKABE, KENICHI |
| 分类号 |
H01L21/28;H01L29/51;(IPC1-7):H01L29/78;H01L21/336 |
主分类号 |
H01L21/28 |
| 代理机构 |
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| 主权项 |
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