发明名称 |
TFT and method for its fabrication |
摘要 |
To fabricate a crystalline semiconductor film with controlled locations and sizes of the crystal grains, and to utilize the crystalline semiconductor film in the channel-forming region of a TFT in order to realize a high-speed operable TFT. A translucent insulating thermal conductive layer 2 is provided in close contact with the main surface of a substrate 1, and an insular or striped first insulating layer 3 is formed in selected regions on the thermal conductive layer. A second insulating layer 4 and semiconductor film 5 are laminated thereover. The semiconductor film 5 is first formed with an amorphous semiconductor film, and then crystallized by laser annealing. The first insulating layer 3 has the function of controlling the rate of heat flow to the thermal conductive layer 2, and the temperature distribution difference on the substrate 1 is utilized to form a single-crystal semiconductor film on the first insulating layer 3. <IMAGE> |
申请公布号 |
EP1054452(A3) |
申请公布日期 |
2004.12.29 |
申请号 |
EP20000110387 |
申请日期 |
2000.05.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;ARAI, YASUYUKI |
分类号 |
H01L21/31;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/786 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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