发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>When the operation frequency is high, in order to cause the rate of change of outputs from an output terminal (OUT) to be abrupt, a selection control signal is caused to be in a low state, thereby causing MOS transistors (T5b, T6b) to be in ON states, thereby causing the combined resistance of the ON-resistances of the MOS transistors in a NOR gate (NOx) to be small. On the other hand, when the operation frequency is low, in order to cause the rate of change of outputs from the output terminal (OUT) to be gentle, the selection control signal is caused to be in a high state, thereby causing the MOS transistors (T5b, T6b) to be in OFF states, thereby causing the combined resistance of the ON-resistances of the MOS transistors in the NOR gate (NOx) to be large.</p>
申请公布号 WO2004114523(A1) 申请公布日期 2004.12.29
申请号 WO2004JP09059 申请日期 2004.06.21
申请人 ROHM CO., LTD.;NISHIKAWA, HIDETOSHI 发明人 NISHIKAWA, HIDETOSHI
分类号 H01L27/04;B23K11/11;B23K11/25;B23K11/31;H01L21/82;H01L21/822;H03K17/687;H03K19/0175;H03K19/0185;(IPC1-7):H03K19/00 主分类号 H01L27/04
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