| 摘要 |
A memory block is subject to an erasure operation by a batch operation. Subsequently, a read-out test is conducted upon the memory block to count the number of unerased memory cells. If the count FN is equal to or greater than a given number TF, a plurality of erasure operations are conducted consecutively next. If FN<TF, a single erasure operation is conducted next, subsequently followed by a read-out test. The erasure operations and the read-out tests are repeated.
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