发明名称 Correcting method for correcting exposure data used for a charged particle beam exposure system
摘要 A charged particle beam exposure system which draws a pattern on an object to be exposed by a plurality of charged particle beams emitted from a plurality of element electron optical systems includes (a) a storage device storing (i) a standard dose data for controlling the irradiation of charged particle beams to an object to be exposed, (ii) plural pieces of proximity effect correction data for correcting the irradiation of the charged particle beams for each incidence position with respect to the object to be exposed, in order to reduce the influence of a proximity effect, and (iii) calibration data for correcting variations in the irradiation dose among the plurality of the charged particle beams emitted from the plurality of element electron optical systems, and (b) a controller for controlling the irradiation of each of the charged particle beams, based on the standard dose data, the proximity effect correction data, and the calibration data.
申请公布号 US6835937(B1) 申请公布日期 2004.12.28
申请号 US20000708590 申请日期 2000.11.09
申请人 CANON KABUSHIKI KAISHA 发明人 MURAKI MASATO;YUI YOSHIKIYO
分类号 H01J37/305;A61N5/00;G01T1/00;G03F7/20;G21K5/10;H01J37/302;H01J37/317;H01L21/027;(IPC1-7):G01T1/00 主分类号 H01J37/305
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