| 发明名称 |
Film forming method, semiconductor device and semiconductor device manufacturing method |
| 摘要 |
The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant for covering wiring. The insulating film covering wiring is formed on a substrate by converting into a plasma and reacting a film forming gas including a component selected from the group consisting of alkoxy compounds having Si-H bonds and siloxanes having Si-H bonds and an oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.
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| 申请公布号 |
US6835669(B2) |
申请公布日期 |
2004.12.28 |
| 申请号 |
US20010903764 |
申请日期 |
2001.07.13 |
| 申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
OKU TAIZO;AOKI JUNICHI;YAMAMOTO YOUICHI;KOROMOKAWA TAKASHI;MAEDA KAZUO |
| 分类号 |
H01L21/203;C23C16/40;C23C16/509;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/203 |
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