METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING MOS TRANSISTOR WITH STRAINED CHANNEL USING HEAT TREATMENT

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to improve switching-speed of an MOS(Metal Oxide Semiconductor) transistor by obtaining a strained channel from an insulating layer with tensile stress using a heat treatment. CONSTITUTION: An MOS transistor is formed at a predetermined region of a semiconductor substrate. A stress layer is formed on the substrate including the MOS transistor(15). Physical stress of the stress layer is converted into tensile stress or the tensile stress of the stress layer is increased by using a heat treatment(21).