发明名称 |
Nonvolatile memory capable of storing multibits binary information and the method of forming the same |
摘要 |
A nonvolatile memory capable of storing multi-bits binary information is provided. The memory includes an oxide formed on a substrate. A control gate is formed on the oxide. An L-shape structure is attached on sidewall of the control gate. Spacers are formed on the L-shape structure to act as a floating gate. A first doped region and a second doped region is formed in the substrate adjacent to the spacers with a channel between the two doped regions. Wherein the spacer represent a first binary status by injecting and storing electrical charges in the spacers. Or to represent a second binary status by not injecting electrical charges into the spacer.
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申请公布号 |
US2004256661(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20040895001 |
申请日期 |
2004.07.20 |
申请人 |
JENG ERIK S. |
发明人 |
JENG ERIK S. |
分类号 |
H01L21/8247;H01L27/115;H01L29/792;(IPC1-7):H01L21/336;H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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地址 |
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