SYSTEM FOR GROWING SILICON CARBIDE CRYSTALS

摘要

A system for growing silicon carbide crystals on substrates is described and comprises a chamber (1) which extends along an axis, wherein the chamber (1) has separate input means (2, 3) for gases containing carbon and for gases containing silicon, substrate support means (4) disposed in a first end zone (Z1) of the chamber, exhaust output means (5) disposed in the vicinity of the support means (4), and heating means adapted for heating the chamber (1) to a temperature greater than 1800°C; the input means (2) for gases containing silicon are positioned, shaped and dimensioned in a manner such that the gases containing silicon enter in a second end zone (Z2) of the chamber; the input means (3) for gases containing carbon are positioned shaped and dimensioned in a manner such that the carbon and the silicon come substantially into contact in a central zone (ZC) of the chamber remote both from the first end zone(Z1) and from the second end zone (Z2).